Integration technology for ferroelectric memory-Reference-Cited by-同舟云学术

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Integration technology for ferroelectric memory

Published:1999-11 Issue:1-4 Volume:27 Page:257-269
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Hada Hiromitsu¹,Tanabe Nobuhiro¹,Amanuma Kzushi¹,Tatsumi Toru¹,Kobayashi Sota¹,Kunio Takemitsu¹

Affiliation:

1. a Silicon Systems Research Laboratories , NEC Corporation , 1120 Shimokuzawa, Sagamihara, Kanagawa, 229-1198, JAPAN

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908228473

Reference10 articles.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of grain boundaries on hydrogen-induced degradation in lead zirconate titanate thin films;Applied Physics Letters;2002-10-21

2. The problems originating from the grain boundaries in dielectric storage capacitors;Solid-State Electronics;2002-10

3. The role of grain-boundary on the hydrogen-induced degradation in thin-film ferroelectric capacitors;IEEE Electron Device Letters;2002-09

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