Role of grain boundaries on hydrogen-induced degradation in lead zirconate titanate thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1516233
Reference11 articles.
1. Ferroelectric Memories
2. Integration technology for ferroelectric memory
3. High density ferroelectric memories: Materials, processing and scaling
4. Electrode‐induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin‐film capacitors
5. H2 damage of ferroelectric Pb(Zr,Ti)O3 thin-film capacitors—The role of catalytic and adsorptive activity of the top electrode
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3. Photo-reduction of silver salts on highly heterogeneous lead zirconate titanate;Nanotechnology;2007-04-05
4. On the suppression of hydrogen degradation in PbZr0.4Ti0.6O3 ferroelectric capacitors with PtOx top electrode;Journal of Applied Physics;2005-11-15
5. Comparison of forming gas effects on the ferroelectric properties between more-oriented and less-oriented Pb(Zr0.52Ti0.48)O3 thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-07
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