High density stand alone-fram-Reference-Cited by-同舟云学术

High density stand alone-fram

Published:2001-01 Issue:1-4 Volume:36 Page:21-39
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Kim Kinam¹

Affiliation:

1. a Technology Development , Memory Device Business, Samsung Electronics Co. , San #24, Nongseo-Lee, Kiheung-Eup, Yongin-City, Kyungki-Do, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108015525

Reference18 articles.

1. An experimental 512-bit nonvolatile memory with ferroelectric storage cell

2. A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme

3. A FRAM technology using 1T1C and triple metal layers for high performance and high density FRAMs

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