A FRAM technology using 1T1C and triple metal layers for high performance and high density FRAMs-Reference-Cited by-同舟云学术

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A FRAM technology using 1T1C and triple metal layers for high performance and high density FRAMs

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Container-title:1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)
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Author:

Lee S.Y.,Jung D.J.,Song Y.J.,Koo B.J.,Park S.O.,Cho H.J.,Oh S.J.,Hwang D.S.,Lee S.I.,Lee J.K.,Park Y.S.,Jung I.S.,Kinam Kim

Publisher

Japan Soc. Appl. Phys

Link

http://xplorestaging.ieee.org/ielx5/6461/17273/00799383.pdf?arnumber=799383

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics;Advanced Materials;2023-03-11

2. A Novel Encapsulation Technology for Mass-Productive 150 nm, 64-Mb, 1T1C FRAM;2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics;2007-05

3. Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device;Japanese Journal of Applied Physics;2004-04-27

4. Highly Stable Etch Stopper Technology for 0.25 µm 1 Transistor 1 Capacitor (1T1C) 32 Mega-Bit Ferroelectric Random Access Memory (FRAM);Japanese Journal of Applied Physics;2003-04-30

5. Novel Damage Curing Technology on One-Mask Etched Ferroelectric Capacitor for Beyond 0.25 μm FRAM;Integrated Ferroelectrics;2003-03

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