A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme-Reference-Cited by-同舟云学术

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A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme

Published:2000-05 Issue:5 Volume:35 Page:697-704
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yeonbae Chung ,Byung-Gil Jeon ,Kang-Deog Suh

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/18193/00841494.pdf?arnumber=841494

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