Reference voltage generation scheme enhancing speed and reliability for 1T1C‐type FRAM-Reference-Cited by-同舟云学术

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Reference voltage generation scheme enhancing speed and reliability for 1T1C‐type FRAM

Published:2014-01 Issue:3 Volume:50 Page:154-156
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Jia Ze¹,Zhang Gong²,Liu Jizhi¹,Liu Zhiwei¹,Liou Juin J.³

Affiliation:

1. School of Microelectronics and Solid‐State ElectronicsUniversity of Electronic Science and Technology of ChinaChengdu610054SichuanPeople's Republic of China

2. Tsinghua National Laboratory for Information Science and TechnologyInstitute of Microelectronics, Tsinghua UniversityBeijing100084People's Republic of China

3. Department of Electrical Engineering and Computer ScienceUniversity of Central FloridaOrlandoFL32816USA

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.3193

Reference9 articles.

1. A 3.3‐V, 4‐Mb nonvolatile ferroelectric RAM with selectively driven double‐pulsed plate read/write‐back scheme;Chung Y.;IEEE J. Solid‐State Circuits,2000

2. High‐speed and low‐power FeRAM utilising merged BL/PL array architecture with twin‐bitline‐driven scheme;Zhang G.;Electron. Lett.,2009

3. A survey of circuit innovations in ferroelectric random‐access memories;Sheikholeslami A.;Proc. IEEE,2000

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensing in Ferroelectric Memories and Flip-Flops;Sensing of Non-Volatile Memory Demystified;2018-08-11

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