The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET-Reference-Cited by-同舟云学术

The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET

Published:2021-08-25 Issue: Volume: Page:
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Container-title:2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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Author:

Tang Lei,Jiang Huaping,Mao Hua,Wu Zebing,Zhong Xiaohan,Qi Xiaowei,Ran Li

Funder

National Key Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9655996/9655997/09656049.pdf?arnumber=9656049

Reference12 articles.

1. Utilization of SiC MOSFET Body Diode in Hard Switching Applications

2. New generation 6.5 kV SiC power MOSFET

3. The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics

4. Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFE Ts;huemer;Mater Sci Forum,2018

5. A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets

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1. Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review;IEEE Transactions on Electron Devices;2024-06

2. Third Quadrant Operation of SiC MOSFETs: Comprehensive Analysis and Condition Monitoring Solution;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-05

3. Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift;IEEE Transactions on Electron Devices;2024-04

4. On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs;Materials Science Forum;2023-06-06

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