Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET-Reference-Cited by-同舟云学术

Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET

Published:2023-01 Issue:1 Volume:38 Page:1155-1165
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Tang Lei¹,Jiang Huaping¹^ORCID,Zhong Xiaohan¹^ORCID,Qiu Guanqun¹^ORCID,Mao Hua¹^ORCID,Jiang Xiaofeng¹,Qi Xiaowei¹,Du Changhong²,Peng Qianlei²,Liu Li¹^ORCID,Ran Li³^ORCID

Affiliation:

1. School of Electrical Engineering, Chongqing University, Chongqing, China

2. Power Development Department, Chongqing Changan New Energy Automobile Technology Co., Ltd., Chongqing, China

3. School of Engineering, University of Warwick, Coventry, U.K.

Funder

Chongqing Technology Innovation and Application Development Special Key Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9911205/09869689.pdf?arnumber=9869689

Reference32 articles.

1. Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various V GS Biases

2. Semiconductor Power Devices

3. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

4. A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance

5. The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET

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