Utilization of SiC MOSFET Body Diode in Hard Switching Applications-Reference-Cited by-同舟云学术

Utilization of SiC MOSFET Body Diode in Hard Switching Applications

Published:2014-02 Issue: Volume:778-780 Page:947-950
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Bolotnikov Alexander¹,Glaser John¹,Nasadoski Jeff¹,Losee Peter¹,Klopman Steven¹,Permuy Alfred²,Stevanovic Ljubisa¹

Affiliation:

1. General Electric Global Research Center

2. General Electric

Abstract

This work discusses the possibility of using SiC MOSFET body diode in switching power conversion applications, focusing on performance and reliability aspects.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.947.pdf

Reference8 articles.

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3. M. Skowronski and S. Ha, J. Appl. Phys., vol. 99, p.011101, (2006).

4. A. Agarwal et al., IEEE Electron Device Lett., vol. 28, p.587, (2007).

5. J. Glaser et al., Applied Power Electronics Conference and Exposition, (2011).

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