A 5800-$\mu$ m2 Resistor-Based Temperature Sensor With a One-Point Trimmed Inaccuracy of ±1.2 °C ($3\sigma$ ) From −50 °C to 105 °C in 65-nm CMOS
Author:
Funder
National Research Foundation of Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8011414/8871355/08877960.pdf?arnumber=8877960
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A 840-<i>µm</i><sup>2</sup> low-power all-MOS temperature sensor front-end with real-time voltage calibration;IEICE Electronics Express;2024-04-10
2. A Compact Temperature to Frequency Converter With 3σ Inaccuracy of +0.57 °C/-0.65°C for On-Chip Thermal Monitoring;IEEE Sensors Journal;2024-04-01
3. A 840-μm2 low-power all-MOS temperature sensor front-end with real-time voltage calibration;IEICE ELECTRON EXPR;2024
4. Simple-Logic Comparator-Offset Mitigation Technique for Resistor-Based Temperature Sensor in DFLL;2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2023-10-27
5. A 0.4-V 0.0294-mm2 Resistor-Based Temperature Sensor Achieving ±0.24 °C p2p Inaccuracy From40 °C to 125 °C and 385 fJ · K2 Resolution FoM in 65-nm CMOS;IEEE Journal of Solid-State Circuits;2023-09
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