A 840-<i>µm</i><sup>2</sup> low-power all-MOS temperature sensor front-end with real-time voltage calibration
Author:
Affiliation:
1. Institute of VLSI Design, Zhejiang University
2. Zhuhai Pantum Electronics Corporation Ltd.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/elex/21/7/21_21.20240055/_pdf
Reference32 articles.
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2. [2] H.-W. Kim, et al.: “CMOS integrated time-mode temperature sensor for self-refresh control in DRAM memory cell,” IEEE Sensors J. 16 (2016) 6687 (DOI: 10.1109/JSEN.2016.2585820).
3. [3] S.-C. Hsia, et al.: “Embedded temperature sensor for multilevel current LED driver,” IEEE Sensors J. 14 (2014) 2801 (DOI: 10.1109/JSEN.2014.2316284).
4. [4] M. Jalalifar and G.-S. Byun: “A wide range CMOS temperature sensor with process variation compensation for on-chip monitoring,” IEEE Sensors J. 16 (2016) 5536 (DOI: 10.1109/JSEN.2016.2568242).
5. [5] F. Reverter, et al.: “On-chip MOSFET temperature sensor for electrical characterization of RF circuits,” IEEE Sensors J. 13 (2013) 3343 (DOI: 10.1109/JSEN.2013.2273572).
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