A 0.4-V 0.0294-mm<sup>2</sup> Resistor-Based Temperature Sensor Achieving ±0.24 °C p2p Inaccuracy From40 °C to 125 °C and 385 fJ · K<sup>2</sup> Resolution FoM in 65-nm CMOS-Reference-Cited by-同舟云学术

A 0.4-V 0.0294-mm² Resistor-Based Temperature Sensor Achieving ±0.24 °C p2p Inaccuracy From40 °C to 125 °C and 385 fJ · K² Resolution FoM in 65-nm CMOS

Published:2023-09 Issue:9 Volume:58 Page:2543-2553
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Shi Dan¹^ORCID,Lei Ka-Meng¹^ORCID,Martins Rui P.¹^ORCID,Mak Pui-In¹^ORCID

Affiliation:

1. State Key Laboratory of Analog and Mixed-Signal VLSI/Institute of Microelectronics, University of Macau, Macao, China

Funder

Science and Technology Development Fund, Macau SAR

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/10229945/10119164.pdf?arnumber=10119164

Reference30 articles.

1. A 0.4V 280-nW frequency reference-less nearly all-digital hybrid domain temperature sensor

2. A Self-Calibrated Hybrid Thermal-Diffusivity/Resistor-Based Temperature Sensor

3. A 10 fJ·K2 Wheatstone Bridge Temperature Sensor With a Tail-Resistor-Linearized OTA

4. A Resistor-Based Temperature Sensor With a 0.13 pJ $\cdot$ K2 Resolution FoM

5. A 5800-$\mu$ m2 Resistor-Based Temperature Sensor With a One-Point Trimmed Inaccuracy of ±1.2 °C ($3\sigma$ ) From −50 °C to 105 °C in 65-nm CMOS

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