Investigation on Transportation Mechanisms of InSnO/ZnO Heterojunction Transistors
Author:
Affiliation:
1. Beijing Information Science and Technology University,School of Information & Communication Engineering,Beijing,China,100101
2. Peking University,School of Integrated Circuits,Beijing,China,100871
Funder
Beijing Municipal Education Commission
Beijing Municipal Natural Science Foundation
Beijing Nova Program
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10511270/10511310/10511612.pdf?arnumber=10511612
Reference10 articles.
1. Back-End-of-Line Compatible Transistors for Monolithic 3-D Integration
2. Monolithically Stacked Two Layers of a-IGZO-Based Transistors Upon a-IGZO-Based Analog/Logic Circuits
3. Double-Gate W-Doped Amorphous Indium Oxide Transistors for Monolithic 3D Capacitorless Gain Cell eDRAM
4. Mobility Enhancement in RF-Sputtered MgZnO/ZnO Heterostructure Thin-Film Transistors
5. High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility
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