A Novel Low Loss Planar Gate LIGBT With P-type Buried Layer-Reference-Cited by-同舟云学术

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A Novel Low Loss Planar Gate LIGBT With P-type Buried Layer

Published:2024-03-03 Issue: Volume: Page:1-3
ISSN:
Container-title:2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Li Fengjie¹,Li Haoyang¹,Zhang Jinping²,Yu Zhengyan¹

Affiliation:

1. Chongqing University of Post and Telecommunications (CQUPT),China

2. Chongqing Institute of Microelectronics Industry Technology, UESTC,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10511270/10511310/10511617.pdf?arnumber=10511617

Reference7 articles.

1. Improvement in lateral IGBT design for 500 V 3 A one chip inverter ICs

2. Analysis on device structures for next generation IGBT

3. The next generation 1200V Trench Clustered IGBT technology with improved trade-off relationship

4. IGBT History, State-of-the-Art, and Future Prospects

5. Comparison of DI and JI lateral IGBTs

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