Author:
Long Hong Yao,Sweet Mark R.,De Souza Maria Merlyne,Narayanan Ekkanath Madathil Sankara
Cited by
5 articles.
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1. A Novel Low Loss Planar Gate LIGBT With P-type Buried Layer;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
2. A Novel High Voltage Low Loss Planar Gate IGBT with Improved p-body Region;2022 IEEE 5th International Conference on Electronics Technology (ICET);2022-05-13
3. Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices;IEEE Transactions on Power Electronics;2021-03
4. 3-D Scaling Rules for High-Voltage Planar Clustered IGBTs;IEEE Transactions on Electron Devices;2020-12
5. High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation;2020 IEEE Applied Power Electronics Conference and Exposition (APEC);2020-03