A Novel High Voltage Low Loss Planar Gate IGBT with Improved p-body Region-Reference-Cited by-同舟云学术

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A Novel High Voltage Low Loss Planar Gate IGBT with Improved p-body Region

Published:2022-05-13 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 5th International Conference on Electronics Technology (ICET)
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Author:

Zhang Jinping¹,Zhu Rongrong¹,Li Xiaofeng¹,Lan Yifei¹,Li Zehong¹,Zhang Bo¹

Affiliation:

1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China,610054

Funder

National Key Research and Development Program of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9823394/9823964/09825447.pdf?arnumber=9825447

Reference13 articles.

1. A Novel High Performance 3300V IGBT with Wide RBSOA

2. A novel high performance enhanced-planar IGBT with P-type buried layer

3. Trench Shielded Planar Gate IGBT (TSPG-IGBT) With Self-Biased pMOS Realizing Both Low On-State Voltage and Low Saturation Current

4. Evaluation of the turn‐off transient controllability for high‐power IGBT modules

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Low Loss Lateral Planar-gate Carrier Stored IGBT with Self-biased P-type Shielding Layer;2023 6th International Conference on Electronics Technology (ICET);2023-05-12

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