Evaluation of the turn‐off transient controllability for high‐power IGBT modules-Reference-Cited by-同舟云学术

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Evaluation of the turn‐off transient controllability for high‐power IGBT modules

Published:2022-02-11 Issue:7 Volume:15 Page:631-643
ISSN:1755-4535
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Tan Kun¹^ORCID,Ji Bing¹,Wang Jun²,Deng Wenjuan²,Li Daohui³^ORCID,Wang Zhiqiang⁴^ORCID,Liu Zheng⁴,Cao Wenping⁵

Affiliation:

1. School of Engineering University of Leicester Leicester UK

2. College of Electrical and Information Engineering Hunan University Changsha China

3. R&D Center Dynex Semiconductor Ltd. Lincoln UK

4. School of Electrical Engineering Dalian University of Technology Dalian China

5. School of Electrical Engineering and Automation Anhui University Hefei China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12255

Reference35 articles.

1. Characterization and Implementation of Resonant Isolated DC/DC Converters for Future MVdc Railway Electrification Systems

2. Online Detection of MOSFET Gate Oxide Degradation in a Three-Phase Inverter-Drive Application

3. Bakran M.M. Eckel H. Helsper M. Nagel A.:Next generation of IGBT‐modules applied to high power traction. In:2007 European Conference on Power Electronics and Applications Aalborg Denmark pp.1–9(2007)https://doi.org/10.1109/EPE.2007.4417379

4. Rahimo M. Kopta A. Linder S.:Novel enhanced‐planar IGBT technology rated up to 6.5kV for lower losses and higher SOA capability. In:2006 IEEE International Symposium on Power Semiconductor Devices and IC's Naples Italy pp.1–4(2006)https://doi.org/10.1109/ISPSD.2006.1666064

5. Nakagawa A.:Theoretical investigation of silicon limit characteristics of IGBT. In:2006 IEEE International Symposium on Power Semiconductor Devices and IC's Naples Italy pp.1–4(2006)https://doi.org/10.1109/ISPSD.2006.1666057

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1. A Load Adaptive Digital Gate Driver IC With Integrated 500 ksps ADC for Drive Pattern Selection and Functional Safety Targeting Dependable SiC Application;IEEE Transactions on Power Electronics;2023-06

2. IGBT Junction Temperature Estimation Using a Dynamic TSEP Independent of Wire Bonding Faults;IEEE Transactions on Power Electronics;2023-04

3. A Novel High Voltage Low Loss Planar Gate IGBT with Improved p-body Region;2022 IEEE 5th International Conference on Electronics Technology (ICET);2022-05-13

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