Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/11050/34863/01666064.pdf?arnumber=1666064
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Superjunction IGBT with split carrier storage layer;Semiconductor Science and Technology;2024-05-28
2. High voltage and high power IGBT performance optimization design;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20
3. Dual injection enhanced planar gate IGBT with self-adaptive hole path for better trade-off and higher SOA capability;Semiconductor Science and Technology;2022-10-14
4. The role of power device technology in the electric vehicle powertrain;International Journal of Energy Research;2022-09-12
5. A novel 3300V conductivity modulation enhanced IGBT with P-type Schottky contact and partial N-type buried layer;International Conference on Electronic Information Engineering and Computer Communication (EIECC 2021);2022-05-04
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