Investigation of the Parasitic Inductance Influence on the Short-Circuit Behaviour of High Voltage IGBTs
Author:
Affiliation:
1. Next Generation Power Electronics Research Center, Kyushu Institute of Technology,Kitakyushu,Japan
2. Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corporation,Tokyo,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131377.pdf?arnumber=10131377
Reference13 articles.
1. The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection
2. Numerical Evaluation of the Short-Circuit Performance of 3.3-kV CIGBT in Field-Stop Technology
3. Comparison of trench gate IGBT and CIGBT devices for 3.3kV high power module applications
4. Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness
5. Novel IEGT based Modular Multilevel Converter for New Hokkaido-Honshu HVDC Power Transmission
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2. A Digital Gate Driver IC with a Digitally Adjustable DESAT and Parameter Adjustment Method for False Detection Prevention and Short-Circuit Protection of 1200V 180A SiC Module;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
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