A Digital Gate Driver IC with a Digitally Adjustable DESAT and Parameter Adjustment Method for False Detection Prevention and Short-Circuit Protection of 1200V 180A SiC Module
Author:
Affiliation:
1. Toshiba Research & Development Center,Wireless System Laboratory,Kanagawa,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509186.pdf?arnumber=10509186
Reference8 articles.
1. Investigation of the Parasitic Inductance Influence on the Short-Circuit Behaviour of High Voltage IGBTs
2. Design Guideline and Practical Solution of PCB-type Rogowski Current Sensor for SiC MOSFET Short-Circuit Protection Based on Frequency Analysis
3. An Ultra-Fast Short Circuit Protection for Three-Phase GaN Electric Drives
4. High-Power Module Silicon Carbide N-Channel MOSFET;MG800FXF2YMS3 datasheet
5. Gate Driver Development and Stray Inductance Extraction of 10 kV SiC MOSFET Module for a Switched-Capacitor MMC Application
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