Digital Gate Driver IC with Fully Integrated Automatic Timing Control Function in Stop-and-Go Gate Drive for IGBTs
Author:
Affiliation:
1. The University of Tokyo,Tokyo,Japan
Funder
NEDO
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131322.pdf?arnumber=10131322
Reference22 articles.
1. General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm
2. A Segmented Gate Driver for E-mode GaN HEMTs with Simple Driving Strength Pattern Control
3. 5 V, 300 MSa/s, 6-bit Digital Gate Driver IC for GaN Achieving 69 % Reduction of Switching Loss and 60 % Reduction of Current Overshoot
4. Full Custom Design of an Arbitrary Waveform Gate Driver With 10-GHz Waypoint Rates for GaN FETs
5. A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression
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1. Review of IGBT Intelligent Gate Drive and Protection Strategies;IEEE Transactions on Power Electronics;2024-06
2. Digital Active Gate Driving Automatically Minimizing Switching Loss While Keeping Surge Current Below User-Specified Target;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
3. Active Gate Driving With Full 6-Bit Resolution for Different SiC MOSFETs Using Variable Gate Current Range Digital Gate Driver IC;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
4. Variable Gate Current Range Digital Gate Driver IC Always Providing 6-bit Controllability in Various IGBTs;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
5. Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction;2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP);2023-11-26
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