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A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression

  • Published:2021-12 Issue:12 Volume:36 Page:14119-14132
  • ISSN:0885-8993
  • Container-title:IEEE Transactions on Power Electronics
  • language:
  • Short-container-title:IEEE Trans. Power Electron.

Author:

Zhang Wei JiaORCID,Yu Jingshu,Cui Wen Tao,Leng Yahui,Liang Jingyuan,Hsieh Yuan-Ta,Tsai Hann-Huei,Juang Ying-Zong,Yeh Wen-Kuan,Ng Wai TungORCID

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits;physica status solidi (a);2023-09-08

2. Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

3. dV/dt Immunity of Half Bridges Based on 650V Enhancement Mode GaN HEMTs;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

4. Susceptibility to Radio Frequency Interference of eGaN Power Switching Legs;2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI);2023-07-29

5. Large-Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot;IEEE Transactions on Power Electronics;2023-07
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