Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells-Reference-Cited by-同舟云学术

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Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells

Published:2021-08 Issue:8 Volume:42 Page:1148-1151
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yoo Ho-Nam^ORCID,Choi Bongsik,Back Jong-Won^ORCID,Kang Ho-Jung^ORCID,Kwon Eunmee,Chung Sungyong,Bae Jong-Ho^ORCID,Park Byung-Gook^ORCID,Lee Jong-Ho^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9495842/09453810.pdf?arnumber=9453810

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability Improvement in Vertical NAND Flash Cells Using Adaptive Incremental Step Pulse Programming (A-ISPP) and Incremental Step Pulse Erasing (ISPE);IEEE Transactions on Electron Devices;2024-03

2. Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash;IEEE Access;2024

3. Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory;Micromachines;2023-11-30

4. Accurate SPICE Model for Cells With Tube-Type Poly-Si Channel in Cell Strings of Vertical NAND Flash Memory;IEEE Transactions on Electron Devices;2023-10

5. Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2023-06-30

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