Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory-Reference-Cited by-同舟云学术

Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory

Published:2023-11-30 Issue:12 Volume:14 Page:2199
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

An Ukju¹^ORCID,Yoon Gilsang¹^ORCID,Go Donghyun¹^ORCID,Park Jounghun¹^ORCID,Kim Donghwi¹,Kim Jongwoo¹,Lee Jeong-Soo¹

Affiliation:

1. Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea

Abstract

Electrical characteristics with various program temperatures (TPGM) in three-dimensional (3-D) NAND flash memory are investigated. The cross-temperature conditions of the TPGM up to 120 °C and the read temperature (TREAD) at 30 °C are used to analyze the influence of grain boundaries (GB) on the bit line current (IBL) and threshold voltage (VT). The VT shift in the E-P-E pattern is successfully decomposed into the charge loss (ΔVT,CL) component and the poly-Si GB (ΔVT,GB) component. The extracted ΔVT,GB increases at higher TPGM due to the reduced GB potential barrier. Additionally, the ΔVT,GB is evaluated using the Technology Computer Aided Design (TCAD) simulation, depending on the GB position (XGB) and the bit line voltage (VBL).

Funder

Samsung Electronics

Ministry of Science and ICT

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

Link

https://www.mdpi.com/2072-666X/14/12/2199/pdf

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