A 60 ns 1 Mb nonvolatile ferroelectric memory with non-driven cell plate line write/read scheme-Reference-Cited by-同舟云学术

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A 60 ns 1 Mb nonvolatile ferroelectric memory with non-driven cell plate line write/read scheme

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Container-title:1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC
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Author:

Koike H.,Otsuki T.,Kimura T.,Fukuma M.,Hayashi Y.,Maejima Y.,Amanuma K.,Tanabe N.,Matsuki T.,Saito S.,Takeuchi T.,Kobayashi S.,Kunio T.,Hase T.,Miyasaka Y.,Shohata N.,Takada M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/3508/10440/00488720.pdf?arnumber=488720

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Degradation-free ferroelectric Pb(Zr, Ti)O3 thin film capacitors with IrO2 top electrode;Integrated Ferroelectrics;1998-09

4. The effects of the catalytic nature of capacitor electrodes on the degradation of ferroelectric Pb(Zr,Ti)O3 thin films during reductive ambient annealing;Journal of Applied Physics;1997-07

5. Analysis and control of surface degenerated layers grown on thin Pb(Zr, Ti)O3 films;Applied Surface Science;1997-03

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