A Multi-layered GaGeTe Electro-Optic Device Integrated in Silicon Photonics
Author:
Affiliation:
1. Department of Electrical Engineering, New York University, Abu Dhabi, UAE
2. Department of Electrical and Computer Engineering, New York University Tandon School of Engineering, Brooklyn, NY, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/50/4357488/10022011.pdf?arnumber=10022011
Reference31 articles.
1. Mid-infrared modulators integrating silicon and black phosphorus photonics
2. Ultrathin GaGeTe p-type transistors
3. Optical and transport properties of GaGeTe single crystals
4. Enhancing Pockels effect in strained silicon waveguides
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