Ultrathin GaGeTe p-type transistors

Author:

Wang Weike1ORCID,Li Liang2ORCID,Zhang Zhitao3,Yang Jiyong3,Tang Dongsheng1,Zhai Tianyou2

Affiliation:

1. Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, Hunan, China

2. State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, Hubei, China

3. High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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