Analysis of Vth Distribution Based on Physical Parameter Variation for 3-D TLC NAND Flash Memory-Reference-Cited by-同舟云学术

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Analysis of Vth Distribution Based on Physical Parameter Variation for 3-D TLC NAND Flash Memory

Published:2023-06-25 Issue: Volume: Page:
ISSN:
Container-title:2023 International Technical Conference on Circuits/Systems, Computers, and Communications (ITC-CSCC)
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Author:

Kim Sungju¹,Shin Hyungcheol²

Affiliation:

1. Seoul National University,Department of Electrical Engineering and Computer Science,Gwanak-gu, Seoul,Korea (South),08826

2. Seoul National University and Integra Semiconductor Co., Ltd,Department of Electrical Engineering and Computer Science,Gwanak-gu,Seoul,Korea (South),08826

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10211092/10212431/10212934.pdf?arnumber=10212934

Reference7 articles.

1. Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories

2. Modeling of program Vth distribution for 3-D TLC NAND flash memory

3. Modeling of program Vth distribution for 3-D TLC NAND flash memory

4. Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory

5. Study of electron and hole injection statistics of BE-SONOS NAND Flash

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