Study of electron and hole injection statistics of BE-SONOS NAND Flash-Reference-Cited by-同舟云学术

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Study of electron and hole injection statistics of BE-SONOS NAND Flash

Published:2010 Issue: Volume: Page:
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Container-title:2010 IEEE International Memory Workshop
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Author:

Lue Hang-Ting,Hsu Tzu-Hsuan,Lai Sheng-Chih,Chen Y. J.,Chen K. F.,Lo Chester,Huang I. J.,Han T. T.,Chen M.S.,Lu W. P.,Chen K. C.,Chang C.S.,Liaw M. H.,Hsieh Kuang-Yeu,Lu Chih-Yuan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5482536/5488307/05488308.pdf?arnumber=5488308

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Vth Distribution Based on Physical Parameter Variation for 3-D TLC NAND Flash Memory;2023 International Technical Conference on Circuits/Systems, Computers, and Communications (ITC-CSCC);2023-06-25

2. Investigation of Program Noise in Charge Trap Based 3D NAND Flash Memory;IEEE Electron Device Letters;2020-01

3. State-of-the-art flash memory devices and post-flash emerging memories;Science China Information Sciences;2011-05

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