8-Layer 3D Vertical Ru/AlOxNy/TiN RRAM with Mega-Ω Level LRS for Low Power and Ultrahigh-density Memory
Author:
Affiliation:
1. Stanford University,Dept. of Electrical Engineering and Stanford NMTRI,Stanford,CA,U.S.A.,94305
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830164.pdf?arnumber=9830164
Reference19 articles.
1. Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part I: Accurate and Computationally Efficient Modeling
2. Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part II: Design Guidelines for Device, Array, and Architecture
3. IITC;hu,2017
4. 3-D Vertical via Nitrogen-Doped Aluminum Oxide Resistive Random-Access Memory
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