3D Vertical Self-Rectifying Memristor Arrays With Split-Cell Structure, Large Nonlinearity (>104) and fJ-Level Switching Energy
Author:
Affiliation:
1. School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, China
Funder
National Key Research and Development Plan of Ministry of Science and Technology (MOST) of the People’s Republic of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10330769/10275130.pdf?arnumber=10275130
Reference17 articles.
1. Self-rectifying resistive memory in passive crossbar arrays
2. A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments
3. Pt/Al2O3/TaO X /Ta Self-Rectifying Memristor With Record-Low Operation Current (<2 pA), Low Power (fJ), and High Scalability
4. Controlled Majority-Inverter Graph Logic With Highly Nonlinear, Self-Rectifying Memristor
5. 8-Layer 3D Vertical Ru/AlOxNy/TiN RRAM with Mega-Ω Level LRS for Low Power and Ultrahigh-density Memory
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1. A tantalum oxide based memristive neuron device for anomaly detection application;Applied Physics Letters;2024-06-03
2. Application of twin-bit self-rectifying via RRAM with unique diode state in cross-bar arrays by advanced CMOS Cu BEOL process;Japanese Journal of Applied Physics;2024-01-19
3. High-temperature tolerant TaOX/HfO2 self-rectifying memristor array with robust retention and ultra-low switching energy;Applied Physics Letters;2024-01-15
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