Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (V<sub>th</sub> + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application-Reference-Cited by-同舟云学术

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (V_th + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application

Published:2022-06-12 Issue: Volume: Page:
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Container-title:2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Huang Kailiang¹,Duan Xinlv²,Feng Junxiao¹,Sun Ying¹,Lu Congyan²,Chen Chuanke²,Jiao Guangfan¹,Lin Xinpeng¹,Shao Jinhai¹,Yin Shihui¹,Sheng Jiazhen¹,Wang Zhaogui¹,Zhang Wenqiang¹,Chuai Xichen²,Niu Jiebin²,Wang Wenwu²,Wu Ying¹,Jing Weiliang¹,Wang Zhengbo¹,Xu Jeffrey¹,Yang Guanhua²,Geng Di²,Li Ling²,Liu Ming²

Affiliation:

1. Huawei Technologies Co., LTD.

2. Institute of Microelectronics of the Chinese Academy of Sciences,Key Laboratory of Microelectronics Devices and Integrated Technology,Beijing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830271.pdf?arnumber=9830271

Reference4 articles.

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