Atomic-Scale Imaging of Polarization Switching in an (Anti-)Ferroelectric Memory Material: Zirconia (ZrO2)-Reference-Cited by-同舟云学术

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Atomic-Scale Imaging of Polarization Switching in an (Anti-)Ferroelectric Memory Material: Zirconia (ZrO2)

Published:2020-06 Issue: Volume: Page:
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Container-title:2020 IEEE Symposium on VLSI Technology
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Author:

Lombardo S.,Nelson C.,Chae K.,Reyes-Lillo S.,Tian M.,Tasneem N.,Wang Z.,Hoffmann M.,Triyoso D.,Consiglio S.,Tapily K.,Clark R.,Leusink G.,Cho K.,Kummel A.,Kacher J.,Khan A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9264988/9264985/09265091.pdf?arnumber=9265091

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Giant energy storage and power density negative capacitance superlattices;Nature;2024-04-09

2. Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications;Applied Physics Reviews;2024-04-08

3. Switching Dynamics in Anti‐Ferroelectric Transistor for Multimodal Reservoir Computing;Advanced Functional Materials;2024-03-25

4. Dynamic memristor for physical reservoir computing;Nanoscale;2024

5. New Materials for Thermal Barrier Coatings;Ceramic Coatings for High-Temperature Environments;2023-12-06

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