Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs-Reference-Cited by-同舟云学术

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Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs

Published:2020-07 Issue:7 Volume:67 Page:2697-2701
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ciou Fong-Min,Hsu Jui-Tse,Chang Ting-Chang^ORCID,Lin Chien-Yu,Jin Fu-Yuan,Lin Yu-Shan,Hung Wei-Chun^ORCID,Chang Kai-Chun,Chang Yen-Cheng,Lin Yun-Hsuan,Hung Yang-Hao,Huang Jen-Wei,Cheng Osbert^ORCID,Huang Cheng-Tung,Ye Yi-Han^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9121781/09093146.pdf?arnumber=9093146

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NBTI Effect Survey for Low Power Systems in Ultra-Nanoregime;Current Nanoscience;2024-05

2. Influence of Localized Hot Carrier Degradation in DSOI Device Operating in MOSFET and BJT Modes;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET;IEEE Journal of the Electron Devices Society;2023

4. Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs;IEEE Transactions on Electron Devices;2022-11

5. Abnormal trend in hot carrier degradation with fin profile in short channel FinFET devices at 14 nm node;Semiconductor Science and Technology;2022-02-25

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