Influence of Localized Hot Carrier Degradation in DSOI Device Operating in MOSFET and BJT Modes-Reference-Cited by-同舟云学术

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Influence of Localized Hot Carrier Degradation in DSOI Device Operating in MOSFET and BJT Modes

Published:2024-03-03 Issue: Volume: Page:1-3
ISSN:
Container-title:2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Qian Yijun¹,Gao Yuan²,Shukla Amit Kumar¹,Wu Tao¹,Mu Zhiqiang²,Lu Kai³,Dong Yemin²,Wei Xing²,Yang Yumeng¹

Affiliation:

1. ShanghaiTech University,School of Information Science and Technology,China

2. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,National Key Laboratory of Materials for Integrated Circuits,China

3. Shanghai Simchip Technology Group Company Ltd.,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10511270/10511310/10511711.pdf?arnumber=10511711

Reference8 articles.

1. Novel Ultrathin FD-SOI BiMOS Device With Reconfigurable Operation

2. Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs

3. Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress

4. Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit

5. Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs

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