Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model-Reference-Cited by-同舟云学术

Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model

Published:2020-06 Issue:6 Volume:67 Page:2243-2248
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gan Weizhuo^ORCID,Prentki Raphael J.^ORCID,Liu Fei^ORCID,Bu Jianhui^ORCID,Luo Kun^ORCID,Zhang Qingzhu^ORCID,Zhu Huilong,Wang Wenwu,Ye Tianchun,Yin Huaxiang^ORCID,Wu Zhenhua^ORCID,Guo Hong

Funder

Academy of Integrated Circuit Innovation

NSFC

Fonds de Recherche du Québec—Nature et Technologies

Natural Sciences and Engineering Research Council of Canada

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9098120/09085897.pdf?arnumber=9085897

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