Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors

Published:2020-04 Issue:4 Volume:67 Page:1606-1612
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shi Xuewen^ORCID,Lu Congyan,Duan Xinlv,Chen Qian,Ji Hansai,Su Yue,Chuai Xichen^ORCID,Liu Dongyang,Zhao Ying,Yang Guanhua,Wang Jiawei,Lu Nianduan,Geng Di^ORCID,Li Ling,Liu Ming^ORCID

Funder

National Basic Research Program of China

Chinese Academy of Sciences

National Natural Science Foundation of China

Beijing Training Project for the Leading Talents in S&T

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9046113/09019882.pdf?arnumber=9019882

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