Integration of>tex<$hbox Ba_xhbox Sr_1-xhbox TiO_3$>/tex<Thin Films With AlGaN/GaN HEMT Circuits-Reference-Cited by-同舟云学术

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Integration of>tex<$hbox Ba_xhbox Sr_1-xhbox TiO_3$>/tex<Thin Films With AlGaN/GaN HEMT Circuits

Published:2004-02 Issue:2 Volume:25 Page:49-51
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:en
Short-container-title:IEEE Electron Device Lett.

Author:

Xu H.,Pervez N.K.,Hansen P.J.,Shen L.,Keller S.,Mishra U.K.,York R.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/28265/01263623.pdf?arnumber=1263623

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current–voltage characteristics and photovoltaic effect of a Au/ZnFe2O4/GaN Schottky junction;Journal of Physics D: Applied Physics;2020-12-14

2. Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition;Journal of Crystal Growth;2020-04

3. Modified Interface Properties of Au/n-type GaN Schottky Junction with a High-k Ba0.6Sr0.4TiO3 Insulating Layer;Journal of Electronic Materials;2018-08-02

4. Domain matched epitaxial growth of (111) Ba0.5Sr0.5TiO3thin films on (0001) Al2O3with ZnO buffer layer;Journal of Applied Physics;2015-03-28

5. Effects of the TiO2 buffer thickness on SrTiO3 (111) epitaxial films grown on GaN (0002);Journal of Applied Physics;2013-04-21

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