Effects of the TiO2 buffer thickness on SrTiO3 (111) epitaxial films grown on GaN (0002)
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4801804
Reference21 articles.
1. Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs
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3. Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology
4. Polar Heterostructure for Multifunction Devices: Theoretical Studies
5. Epitaxial fabrication and memory effect of ferroelectric LiNbO3 film/AlGaN/GaN heterostructure
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1. Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer;Journal of Applied Physics;2020-06-07
2. Epitaxial growth mechanism of perovskite (1 1 1) SrTiO3 on wurtzite (0 0 0 2) GaN with single unit-cell TiN buffer layers;Applied Surface Science;2019-01
3. Heteroepitaxy of perovskite (111) SrTiO3 on wurtzite (0002) GaN using an artificial interface lattice design;CrystEngComm;2019
4. Integration of epitaxial Pb(Zr0.52Ti0.48)O3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers;Thin Solid Films;2015-09
5. Enhanced photoelectrochemical performance of {001}TiO2/{001}SrTiO3 epitaxial heterostructures;Journal of Solid State Electrochemistry;2015-08-18
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