Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Author:

Nadda Kanika,Kumar M. Jagadesh

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Physical Insight into electrostatically doped TFET considering Ambipolarity conduction;2022 5th International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT);2022-11-26

2. Electrostatic Doping and Devices;Springer Handbook of Semiconductor Devices;2022-11-11

3. Mg2Si/Si heterojunction dopingless TFET with reduced random dopant fluctuations for low power applications;Journal of Materials Science: Materials in Electronics;2022-02-15

4. A fair comparison of the performance of charge plasma and electrostatic tunnel FETs for low-power high-frequency applications;Journal of Computational Electronics;2019-08-20

5. Approach on electrically doped TFET for suppression of ambipolar and improving RF performance;IET Circuits, Devices & Systems;2019-07-18

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