Mg2Si/Si heterojunction dopingless TFET with reduced random dopant fluctuations for low power applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10854-022-07860-3.pdf
Reference41 articles.
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2. J. Appenzeller, Y.M. Lin, J. Knoch, P. Avouris, Band-to-band tunneling in carbon nanotube field-effect transistors. Phys. Rev. Lett. 93(19), 196805 (2004)
3. H. Lu, A. Seabaugh, Tunnel field-effect transistors: state-of-the-art. IEEE Trans. Electron. Devices Soc. 2(4), 44–49 (2014)
4. W.Y. Choi, B.G. Park, J.D. Lee, T.-J.K. Liu, Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett. 28(8), 743–745 (2007)
5. A.M. Ionescu, H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373), 329 (2011)
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