Approach on electrically doped TFET for suppression of ambipolar and improving RF performance-Reference-Cited by-同舟云学术

Approach on electrically doped TFET for suppression of ambipolar and improving RF performance

Published:2019-07-18 Issue:6 Volume:13 Page:787-792
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Venkata Chandan Bandi¹^ORCID,Nigam Kaushal²,Sharma Dheeraj¹

Affiliation:

1. Nanoelectronics and VLSI Lab, Electronics and Communication Engineering DisciplinePDPM‐Indian Institute Information Technology Design and ManufacturingJabalpur482005India

2. Nanoelectronics and VLSI Lab, Electronics and Communication Engineering DisciplineJaypee Institute of Information TechnologyNoida201309India

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2018.5394

Reference30 articles.

1. Silicon surface tunnel transistor

2. Low-subthreshold-swing tunnel transistors

3. RF-CMOS performance trends

4. Device scaling limits of Si MOSFETs and their application dependencies

5. Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric

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