Novel InAs/Si Heterojunction Dual-Gate Triple Metal P-i-N Tunneling Graphene Nanoribbon Field Effect Transistοr (DG-TM-TGNFET) Fοr High-Frequency Applicatiοns-Reference-Cited by-同舟云学术

Novel InAs/Si Heterojunction Dual-Gate Triple Metal P-i-N Tunneling Graphene Nanoribbon Field Effect Transistοr (DG-TM-TGNFET) Fοr High-Frequency Applicatiοns

Published:2021-09-22 Issue: Volume: Page:251-262
ISSN:1876-1100
Container-title:Lecture Notes in Electrical Engineering
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Author:

Dutta Ritam,Paitya Nitai

Publisher

Springer Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-16-4947-9_17

Reference18 articles.

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2. Zhang Q, Zhao W, Seabaugh A (2006) Low-subthreshold-swing tunnel transistors. IEEE Electron Device Lett 27(4):297–300

3. Choi WY, Park BG, Lee JD (2007) Tunneling field effect transistor (TFET) with subthreshold swing (SS) less than 60mV/dec. IEEE Electron Device Lett 28(8):743–745

4. Verhulst AS, Leonelli D, Rooyackers R, Groeseneke G (2011) Drain voltage dependent analytical model of tunnel field-effect transistors. J Appl Phys 110(2):024510

5. Brocard S, Pala M, Esseni D (2012) Design options for heterojunction tunnel FETs with high on current and steep sub-VT slope. In: Proceedings IEEE international electron devices meeting (IEDM). San Francisco, CA, USA, pp 1–4

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