Fixed charge-induced mobility degradation and its recovery in MISFETs with Al/sub 2/O/sub 3/ gate dielectric-Reference-Cited by-同舟云学术

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Fixed charge-induced mobility degradation and its recovery in MISFETs with Al/sub 2/O/sub 3/ gate dielectric

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Container-title:Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537)
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Author:

Torii K.,Shimamoto Y.,Saito S.,Obata K.,Yamauchi T.,Hisamoto D.,Yokoyama N.,Hiratani A.,Onai T.

Publisher

Japan Soc. Appl. Phys

Link

http://xplorestaging.ieee.org/ielx5/7646/20877/00967591.pdf?arnumber=967591

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Built-in interface in high-κ gate stacks;Applied Surface Science;2003-06

2. Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics;Microelectronic Engineering;2003-05

3. In-Line Electrical Metrology for High-K Gate Dielectrics Deposited by Atomic Layer CVD;Journal of The Electrochemical Society;2003

4. Limited reaction growth of YSZ (ZrO2:Y2O3) thin films for gate insulator;Vacuum;2002-08

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