Built-in interface in high-κ gate stacks-Reference-Cited by-同舟云学术

Built-in interface in high-κ gate stacks

Published:2003-06 Issue:1-4 Volume:216 Page:208-214
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hiratani Masahiko,Torii Kazuyoshi,Shimamoto Yasuhiro,Saito Shin-Ichi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

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3. Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates

4. S.J. Lee, H.F. Luan, C.H. Lee, T.S. Jeon, W.P. Bai, Y. Senzaki, D. Roberts, D.L. Kwong, in: Technical Digest of IEEE Symposium on VLSI Technology, Kyoto, 2001, p. 133.

5. Y. Kim, et al., in: Technical Digest of IEEE International Electron Devices Meeting, Washington, DC, 2001, p. 455.

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