Simultaneous carrier transport enhancement and variability reduction in Si MOSFETs by insertion of partial monolayers of oxygen-Reference-Cited by-同舟云学术

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Simultaneous carrier transport enhancement and variability reduction in Si MOSFETs by insertion of partial monolayers of oxygen

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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Author:

Mears R.J.,Xu N.,Damrongplasit N.,Takeuchi H.,Stephenson R.J.,Cody N.W.,Yiptong A.,Huang X.,Hytha M.,King-Liu T.-J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6234901/6243280/06243326.pdf?arnumber=6243326

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Intermixing reduction in ultra-thin titanium nitride/hafnium oxide film stacks grown on oxygen-inserted silicon and associated reduction of the interface charge dipole;Journal of Applied Physics;2021-11-14

2. Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel;IEEE Journal of the Electron Devices Society;2018

3. Electron mobility enhancement in (100) oxygen-inserted silicon channel;Applied Physics Letters;2015-09-21

4. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry;Applied Surface Science;2015-01

5. Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology;IEEE Transactions on Electron Devices;2014-09

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