Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8239375/8251355/08251463.pdf?arnumber=8251463
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigating Feeding Techniques for High-power and High-efficiency E-band Power Amplifiers;2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR);2024-01-21
2. A 24 GHz Harmonic-Injection Doherty Power Amplifier with 42% PAE at 6 dB OPBO in 100 nm GaN Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
3. E-band Downlink GaN PA with a Homogeneous Output Power of 2.7W and a Peak PAE of 32.3%;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
4. Outdoor Transmission Trials in the W-Band for 6G Mobile Access Scenarios;2023 IEEE 97th Vehicular Technology Conference (VTC2023-Spring);2023-06
5. 2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%;IEEE Microwave and Wireless Technology Letters;2023-06
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