Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8239375/8251355/08251463.pdf?arnumber=8251463
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 24 GHz Harmonic-Injection Doherty Power Amplifier with 42% PAE at 6 dB OPBO in 100 nm GaN Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
2. E-band Downlink GaN PA with a Homogeneous Output Power of 2.7W and a Peak PAE of 32.3%;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
3. 2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%;IEEE Microwave and Wireless Technology Letters;2023-06
4. Outdoor Transmission Trials in the W-Band for 6G Mobile Access Scenarios;2023 IEEE 97th Vehicular Technology Conference (VTC2023-Spring);2023-06
5. Design, Implementation and Demonstration of Waveguide Components for OTA Power-Combining in W-Band;2023 17th European Conference on Antennas and Propagation (EuCAP);2023-03-26
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