High Speed Directly Modulated DFB Lasers Having MQW Based Passive Reflectors
Author:
Affiliation:
1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/68/10036340/10041217.pdf?arnumber=10041217
Reference22 articles.
1. Low-chirp isolator-free 65-GHz-bandwidth directly modulated lasers
2. Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate
3. 1.3 ?M high speed directly modulated InGaAlAs/InP DFB laser with integrated DBR feedback region;zhu;Chin J Lasers,2023
4. Experimental demonstration of DFB lasers with active distributed reflector
5. 1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si
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5. 50 Gb/s Directly Modulated $1.3\ \mu \mathrm{m}$ InGaAlAs/InP DFB Laser Having MQW Based Passive DBR Section;2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings (ACP/POEM);2023-11-04
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