50 Gb/s Directly Modulated $1.3\ \mu \mathrm{m}$ InGaAlAs/InP DFB Laser Having MQW Based Passive DBR Section-Reference-Cited by-同舟云学术

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50 Gb/s Directly Modulated $1.3\ \mu \mathrm{m}$ InGaAlAs/InP DFB Laser Having MQW Based Passive DBR Section

Published:2023-11-04 Issue: Volume:50 Page:1-3
ISSN:
Container-title:2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings (ACP/POEM)
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Author:

Huan Li¹,Xuyuan Zhu¹,Jing Guo¹,Daibing Zhou¹,Lingjuan Zhao¹,Song Liang¹

Affiliation:

1. Institute of Semiconductors, Chinese Academy of Sciences,Key Laboratory of Semiconductor Materials Science,Beijing,China,100083

Funder

National Key Research and Development Program of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10368381/10368607/10369495.pdf?arnumber=10369495

Reference7 articles.

1. Uncooled 100 GBd O-Band EML for Datacom Transmitter Arrays

2. Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

3. A Novel High Speed Directly Modulated Dual Wavelength 1.3 μm DFB Laser for THz Communications

4. 1.3 µm High Speed Directly Modulated InGaAlAs/InP DFB Laser with Integrated DBR Feedback Region;Zhu;Chinese Journal of Lasers,2023

5. High Speed Directly Modulated DFB Lasers Having MQW Based Passive Reflectors

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