Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate
Author:
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://www.nature.com/articles/s41566-020-00700-y.pdf
Reference43 articles.
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2. Sasada, N. et al. Wide-temperature-range (25 °C to 80 °C) 53-GBaud PAM4 (106-Gb/s) operation of 1.3-μm directly modulated DFB lasers for 10-km transmission. J. Lightwave Technol. 37, 1686–1689 (2019).
3. Uomi, K., Sasaki, S., Tsuchiya, T., Nakano, H. & Chinone, N. Ultralow chirp and high-speed 1.55 μm multiquantum well λ/4-shifted DFB lasers. IEEE Photon. Technol. Lett. 2, 229–230 (1990).
4. Morton, P. A. et al. 25 GHz bandwidth 1.55 μm GaInAsP p-doped strained multiquantum-well lasers. Electron. Lett. 28, 2156–2157 (1992).
5. Uomi, K., Aoki, M., Tsuchiya, T. & Takai, A. Dependence of high-speed properties on the number of quantum wells in 1.55 μm InGaAs-InGaAsP MQW λ/4-shifted DFB lasers. IEEE J. Quantum Electron. 29, 355–360 (1993).
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